A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...
Santa Clara, CA and Kyoto, Japan, June 25, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the BM6GD11BFJ-LB, an isolated gate driver IC optimized for driving 600V-class ...
GENEVA, SWITZERLAND, April 1, 2026 / EINPresswire.com / — STMicroelectronics has announced two new high-speed half-bridge gate drivers that bring gallium-nitride (GaN) efficiency, thermal performance, ...
GENEVA, SWITZERLAND, March 19, 2026 /EINPresswire.com/ — STMicroelectronics’ EVSTDRVG611MC gallium-nitride (GaN) motor-control reference design for appliances and ...
Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds ...
A low-cost gate driver solution for gallium nitride (GaN) FETs has been made available for low- to mid-power applications like LED lighting, charging, microinverters, UPSes, and gaming computers. The ...
While silicon-carbide (SiC) power devices have been getting considerable and much-deserved attention lately, it has a “competitor”: devices based on gallium nitride (GaN, and to be more precise, it’s ...
By embedding digital logic directly into the GaN chiplet, Intel collapses what is typically a small system into a single unit ...
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