At the upcoming IEEE International Electron Devices Meeting (IEDM), Intel is expected to present papers on its efforts to develop gate-all-around transistors. One paper from Intel describes a more ...
A recent study published in Advanced Electronic Materials introduces a self-aligned gate architecture for carbon nanotube (CNT)-based phototransistors designed for ...
The devices, which operate on a heterojunction-gated (HG) structure, demonstrate high responsivity and detectivity while maintaining a simplified fabrication process. This approach avoids the ...
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