The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.

The following is a special guest post by Steve Longoria, Senior VP of Worldwide Business Development at Soitec. It first appeared as part of the Advanced Substrate News special edition on FD-SOI ...

SANTA CLARA, Calif., Sept. 24, 2024 (GLOBE NEWSWIRE) -- Silvaco Group, Inc. (SVCO) (Nasdaq: SVCO, “Silvaco” or the “Company”), a provider of TCAD, EDA software, and SIP solutions that enable ...

Austin, Texas — Intel Corp. researchers will present a vertical triple-gate structure combined with a high-k oxide and metal electrode gate stack at the 2006 Symposium on VLSI Technology, which kicks ...

Front-end engineers at SEMATECH will combine planar CMOS approaches with new channel materials to develop effective transistors for the 22 nm half-pitch technology generation – but will continue to ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

For years, silicon foundries have rolled out their respective leading-edge processes roughly on a two-year cadence. The long-standing goal has been to keep foundry customers on a competitive price, ...

An integrated circuit (IC) technique developed by Fairchild Instruments in 1959 that creates transistors on a flat surface compared to the uneven surface of the earlier mesa process. The planar ...

FinFET technology enabled lower leakage, reduced short-channel effects, and better performance at reduced voltages. It successfully extended CMOS scaling from the 22nm node through the 7nm generation ...

At 0.128 µm2, a new SRAM cell using fin-shaped FETs (FinFETs) is the smallest such cell ever developed, according to Toshiba Corp, IBM, and AMD. At 0.128 µm 2, a new SRAM cell using fin-shaped FETs ...

Taiwan Semiconductor Manufacturing Company (TSMC) may be showing off its vision for the future of chip manufacturing technologies beyond 20 nanometers when it unveils its latest research into FinFET ...

We typically cover Intel's efforts in developing its next-generation nodes, such as Intel 4 (formerly 7nm), which is just now rolling off the production line. But today, Intel is announcing new ...