A new research paper titled “Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages” was published by researchers at Sungkyunkwan University and Korea University.

Samsung Electronics is currently dedicated to the R&D of 11nm level DRAM and ninth-generation 3D NAND Flash. The goal is to raise integration to the highest level in the industry, realize its existing ...

To solidify its leading position in the NAND flash market, Samsung Electronics reportedly plans to again utilize a double-stack technology for manufacturing 3D NAND over 300 layers, aiming to surpass ...

SK Hynix announced that it will mass-produce 321-layer 4-dimensional (4D) NAND flash in the first half of 2025. This demonstrates its technological prowess by signaling a breakthrough beyond the ...

NAND flash memory is a key enabler in today’s systems, but it’s a difficult business. NAND suppliers require deep pockets and strong technology to survive in the competitive landscape. And going ...

Traditional planar NAND flash has had a long and illustrious run, but its time is over. Multiple manufacturers have announced they have no plans to pursue 2D NAND below the 15nm process node. Share on ...

NAND flash technology is on a roll with advancements in cell structure and the subsequent boost in storage density. That allows this non-volatile-memory (NVM) chip to deliver faster throughput and ...

The late 1990s saw the widespread introduction of solid-state storage based around NAND Flash. Ranging from memory cards for portable devices to storage for desktops and laptops, the data storage ...

Traditional planar NAND flash has had a long and illustrious run, but its time is over. Multiple manufacturers have announced they have no plans to pursue 2D NAND below the 15nm process node. Share on ...