Mitsubishi announced the development of a new version of its 2.0-kV IGBT module in an LV100 package intended specifically for photovoltaic applications. The power module, which fills the gap between 1 ...

The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of ten new models of its industrial-use NX-type 1.2kV insulated gate bipolar transistor (IGBT) module ...

A lack of planarity along the interface between the solder and the ceramic raft in an IGBT module is a common anomaly that can make heat dissipation uneven across the die and cause the die to crack.

Infineon Technologies AG announced the launch of two new power module platforms designed to improve the performance of high-voltage IGBTs in voltage classes from 1200 V up to 6.5 kV. To make the ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...

Cissoid, the Belgian power semiconductor specialist, is introducing new families of power modules designed for automotive, industrial, and energy markets and covering a wide variety of current and ...

The newly released CMT‑PLA1BL12300MA combines CISSOID’s advanced switching technology with the widely used CPAK‑EDC package, aiming to deliver a reliable and cost‑effective solution for systems ...

The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...

After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 2024, PARA LIGHT ELECTRONICS CO., LTD. (Referred to as"Para Light" ...