A 600-V half-bridge gate driver, the STDriveg600 from STMicroelectronics, is capable of driving GaN or silicon transistors. The part offers high current output and short propagation delay of 45 ns, ...

Skyworks Solutions, Inc. has introduced the next generation of its isolated gate driver board (GDB) reference design that leverages Wolfspeed’s 1700-V XM3 SiC FET. The new Si828x-BAWB-KIT gate driver ...

Members can download this article in PDF format. Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM Europe – Power Integrations (NASDAQ: POWI), the leader in gate driver technology for medium- and high-voltage inverter applications, today announced the SCALE ...

If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it ...

Power-Switching Enablers Low-power, logic-level switching signals can't drive moderate- to high-power semiconductor switches, such as the MOSFET (metal-oxide semiconductor field-effect transistor) and ...

Versatile, scalable gate drivers rated for 1200 V and 1700 V applications SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and ...

Microchip is introducing its 600V Gate Driver portfolio, featuring 12 devices for the protection of discrete MOSFETs and IGBTs. They are available in half-bridge, high-side/low-side and 3-phase driver ...

A ready-to-use reference platform that helps engineers accelerate the development of efficient mid-power inverter systems ...

STMicroelectronics has introduced two new automotive‑grade isolated gate drivers designed to support higher switching frequencies and improved efficiency in electric and hybrid vehicle systems. ST ...