High-electron-mobility transistor (HEMT) devices based on gallium nitride (GaN) offer superior electrical characteristics and are a valid alternative to MOSFETs and IGBTs in high-voltage and ...
CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics ...
Motor control, particularly frequency-controlled drives, is a technology that has advanced quickly in recent years as a result of the widespread use of motors in a variety of applications and the ...
GENEVA, SWITZERLAND, March 19, 2026 /EINPresswire.com/ — STMicroelectronics’ EVSTDRVG611MC gallium-nitride (GaN) motor-control reference design for appliances and ...
“Wide bandgap semiconductors such as GaN and SiC are being actively considered in various motor control applications for the power density and efficiency benefits they bring. CGD’s ICeGaN technology ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results