BEAVERTON, Ore. — Intel Labs says it has successfully fabricated an indium-gallium-arsenide field-effect transistor (FET) atop a silicon substrate by integrating a high-k gate stack. As in Intel's ...
The fabrication of photovoltaics and optoelectronic devices such as near-infrared (NIR) imagers looks set to become significantly easier thanks to a new way of growing layers of compound semiconductor ...
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