EDN

Scaling down on the wings of a FinFET-DGCMOS

The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.
EDN

Toshiba, IBM, and AMD Develop World’s Smallest FinFET SRAM Cell with High-k/Metal Gate

TOKYO & NEW YORK & SUNNYVALE, Calif. – 16 Dec 2008: Toshiba Corporation (TOKYO:6502), IBM (NYSE: IBM), and AMD (NYSE:AMD) today announced that they have together developed a Static Random Access ...
Electronic Design

FinFETs Create Smallest SRAM Cell Ever

At 0.128 µm2, a new SRAM cell using fin-shaped FETs (FinFETs) is the smallest such cell ever developed, according to Toshiba Corp, IBM, and AMD. At 0.128 µm 2, a new SRAM cell using fin-shaped FETs ...
Semiconductor Engineering

Automatic Layout Generator Targeting Region-based Layouts for Advanced FinFET-Based Full-Custom Circuits (UT Austin/NVIDIA)

A technical paper titled “AutoCRAFT: Layout Automation for Custom Circuits in Advanced FinFET Technologies” was published by researchers at UT Austin and NVIDIA. “This paper presents AutoCRAFT, an ...
Electronic Design

FinFETs Herald A Seismic Shift In Semiconductor Technology

When making the transition from planar devices to FinFETs, IP design challenges arise that require education and experience when dealing with the complexities. Since the inception of the ...