The leading-edge foundry business is challenging. For starters, foundry vendors require vast resources, gigantic fabs and lots of know-how. And yet, it’s still difficult to make money in this business ...

(Nanowerk News) Takashi Matsukawa and Meishoku Masahara and others, Silicon Nano-Device Group, the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and ...

The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

FinFET devices were developed to address the need for improved gate control to suppress leakage current (IOFF); DIBL (drain-induced barrier lowering); and process‐induced variability below ...

Covina, April 13, 2023 (GLOBE NEWSWIRE) -- FinFET is Fin Field-effect Transistor with new complementary metal oxide semiconductor transistor based on similarity between shape of fin and transistor.

Stating that not all FinFETs are created equal, Samsung Electronics Co., Ltd., a global leader in advanced semiconductor solutions, today announced that the IP and design enablement ecosystem for its ...

As the major portion of the industry adopts FinFETs as the workhorse transistor for 16nm and 14nm, researchers worldwide are looking into the limits of FinFETs and potential device solutions for the ...

In 2024, the CPU segment dominated the FinFET Technology Market with a 29% share, due to increasing consumer electronics demand for high performance computing, data centers, and AI. FinFET is energy ...

Steven Musil is a senior news editor at CNET News. He's been hooked on tech since learning BASIC in the late '70s. When not cleaning up after his daughter and son, Steven can be found pedaling around ...

FinFET technology is seen as the answer to fabrication processes below 20 nm. However, FinFET also presents a lot of uncertainty and concern related to defect manifestation, necessary test methods, ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...