Dynamic random access memory (DRAM) remains a cornerstone of modern electronic systems, enabling rapid data storage and retrieval. Recent developments have focused on capacitorless designs – notably ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of OCTRAM (Oxide-Semiconductor Channel Transistor DRAM), a new type of 4F 2 DRAM, ...

SEOUL, South Korea, June 9, 2025 /PRNewswire/ -- SK hynix Inc. (or "the company", www.skhynix.com) announced today that it presented a new DRAM technology roadmap for the next 30 years and the ...

Kioxia develops high-density 3D DRAM using stackable oxide-semiconductor transistors Eight-layer transistor stacks show reliable operation in laboratory demonstrations Oxide-semiconductor InGaZnO ...

Kioxia and Nanya Technology have co-developed a type of 4F 2 DRAM known as Oxide-Semiconductor Channel Transistor DRAM (OCTRAM). It features an oxide-semiconductor transistor that has both high ON ...