HEFEI, China, Oct. 01, 2022 (GLOBE NEWSWIRE) -- Lakesemi announced that it has developed a new generation silicon carbide full bridge with rectifier module — LSCT30PV120B9G. This new module has a very ...
OSLO, Norway--(BUSINESS WIRE)--SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) technology for high-power, high-efficiency, harsh-environment power management and ...
CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. recently launched a new Silicon Carbide (SiC) power module FMF400DY-24B. The 400A, 1200V Dual SiC MOSFET module includes an anti-parallel ...
ROHM has developed a 1200V/300A full SiC power module designed for inverters and converters in solar power conditioners and industrial equipment. The 300A rated current is said to make the ...
SemiQ, a designer and developer of silicon carbide (SiC) solutions, has announced a new family of three 1200V SiC full-bridge modules, each integrating two of the company's rugged high-speed switching ...
The high 300A rated current makes the BSM300D12P2E001 suitable for high power applications such as large-capacity power supplies for industrial equipment, while 77% lower switching loss vs.
May 28, 2013 – Mouser Electronics, Inc. today announced it is stocking the industry's first SiC MOSFET and SiC Schottky diode combined in a single half-bridge package-the CAS100H12AM1 from Cree. Cree ...
Recently, Chinese semiconductor company Beijing NEXIC Technology Co., Ltd. has launched a state-of-art 1200V SiC MOSFET device product (N2M120007PP0) for renewable energy applications, achieving an ...
Cree has introduced its first fully qualified silicon carbide (SiC) mosfet power devices in “bare die” or chip form for use in power electronics modules. In traditional mosfet packages the parasitic ...
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